在TFT小型化趨勢下，需要進一步提高氫化非晶硅薄膜晶體管的TFT特性，尤其是開態(tài)電流特性。本文結(jié)合生產(chǎn)實際，闡述了工藝上改善氫化非晶硅開態(tài)電流特性的方法，包括提高單位面積柵絕緣層電容和改善載流子遷移率。實驗結(jié)果表明，降低高速沉積柵絕緣層的氣壓和厚度，能有效提高單位面積柵極絕緣層電容。增加低速沉積柵絕緣層的Si/N比及優(yōu)化氫等離子體處理工藝，可以有效改善載流子遷移率。
In the trend of TFT miniaturization, the TFT characteristics of a-Si:H thin film transistor need be improved, especially for Ion characteristics. Considering the actual production, the author explained the way to improve a-Si:H TFT characteristics in the production process. In order to improve Ion, the gate insulator capacitance per unit area and the carrier mobility should be increased. According to experimental results, when the pressure and thickness of gate insulator with high deposition rate reduced, the gate insulator capacitance per unit area can be improved effectively. On the other hand, when the Si/N ratio of gate insulator with low deposition rate increased, and the H2 Plasma process optimized, the carrier mobility can be improved effectively.
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